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| LEADER |
01038nam a2200217 a 4500 |
| 001 |
1791630 |
| 005 |
20171111234538.0 |
| 008 |
130212s2012 gw a sb 001 0 eng d |
| 020 |
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|z 9783527330324
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| 040 |
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|a CaPaEBR
|z 9783527646371 (e-book)
|
| 050 |
1 |
4 |
|a QC585
|b .H54 2012eb
|
| 245 |
0 |
0 |
|a High-k gate dielectrics for CMOS technology
|c edited by Gang He and Zhaoqi Sun.
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| 260 |
|
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|a Weinheim :
|b Wiley-VCH,
|c 2012.
|
| 300 |
|
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|a xxxi, 558 p. :
|b ill. (some col.)
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| 504 |
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|a Includes bibliographical references and index.
|
| 505 |
0 |
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|a pt. 1. Scaling and challenging of Si-based CMOS -- pt. 2. High-k deposition and materials characterization -- pt. 3. Challenge in interface engineering and electrode -- pt. 4. Development in non-Si-based CMOS technology -- pt. 5. High-k Application in novel devices -- pt. 6. Challenge and directions.
|
| 650 |
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0 |
|a Dielectrics.
|
| 700 |
1 |
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|a He, Gang.
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| 710 |
2 |
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|a ebrary, Inc.
|
| 856 |
4 |
0 |
|u http://site.ebrary.com/lib/ucy/Doc?id=10653595
|
| 952 |
|
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|a CY-NiOUC
|b 5a0458436c5ad14ac1ed0f44
|c 998a
|d 945l
|e -
|t 1
|x m
|z Books
|
