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00849nam a2200205 a 4500 |
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20171111231115.0 |
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000315s1987 gr r 000 0 eng d |
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|a 007065381X
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040 |
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|a GR-KoDPT
|b gre
|e AACR2
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050 |
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|a TK7871.99.M44
|b T77 1987
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100 |
1 |
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|a Τσιβίδης, Γιάννης
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245 |
1 |
0 |
|a Operation and modeling of the MOS transistor/
|c Yannis P. Tsividis
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260 |
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|a New York:
|b McGraw-Hill,
|c c1987
|
300 |
|
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|a xx, 505 σ. :
|b εικ. ;
|c 25 εκ.
|
490 |
0 |
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|a McGraw-Hill series in electrical engineering. Electronics and electronic circuits
|
504 |
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|a Περιέχει βιβλιογραφικές παραπομπές και ευρετήριο
|
650 |
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0 |
|a Metal oxide semiconductors
|x Mathematical models
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710 |
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|a McGraw-Hill
|
952 |
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|a GR-KoDPT
|b 59cc26436c5ad13446f96af5
|c 998a
|d 945l
|e TK 7871 .99
|t 1
|x m
|z Books
|