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20171111231051.0 |
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990921s1988----gr gr 000 0 Eng d |
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|a 007065381X
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|a GR-AtNTU
|b gre
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| 082 |
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|2 22
|a 621.3815284 ΤΣΙ
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| 100 |
1 |
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|a Τσιβίδης, Ιωάννης Π
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| 245 |
1 |
0 |
|a Operation and modeling of the MOS transistor /
|c Yannis P. Tsividis
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| 260 |
|
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|a New York:
|b McGraw-Hill Book Company,
|c c1988
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| 300 |
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|a xx, 505 p. :
|b ill., diagrams. ;
|c 24 cm.
|
| 490 |
0 |
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|a McGraw-Hill series in electrical engineering. Electronics and electronic circuits
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| 504 |
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|a Includes bibliographical references and index.
|
| 650 |
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0 |
|a Metal oxide semiconductors
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| 952 |
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|a GR-AtNTU
|b 59cc22216c5ad13446f8c25e
|c 998a
|d 945l
|e 621.3815284 ΤΣΙ
|t 5
|x m
|z Books
|
