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00708nam a2200193 a 4500 |
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20171111230049.0 |
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140523s1992----gr gr 000 0 Eng d |
| 020 |
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|a 0471573299
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| 040 |
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|a GR-AtNTU
|b gre
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| 082 |
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|2 22
|a 537.6226 ADA
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| 100 |
1 |
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|a Adachi, Sadao
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| 245 |
1 |
0 |
|a Physicla properties of III-V semiconductor compounds :
|b InP, InAs, GaAs, GaP, InGaAs, and InGaAsP /
|c Sadao Adachi
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| 260 |
|
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|a New York:
|b John Wiley,
|c 1992
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| 300 |
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|a xviii, 318 p. :
|b diagrams. ;
|c 24 cm.
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| 504 |
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|a Includes bibliographical references and index.
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| 650 |
1 |
0 |
|a Gallium arsenide semiconductors
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| 650 |
1 |
0 |
|a Indium alloys
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| 952 |
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|a GR-AtNTU
|b 59cc15396c5ad13446f693f1
|c 998a
|d 945l
|e 537.6226 ADA
|t 1
|x m
|z Books
|
