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03798nam a2200325 a 4500 |
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20171111234744.0 |
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070802s2003 enka ob 100 0 eng d |
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|a 9780444513397
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|a 0444513396
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|a 9780080540269
|q (electronic bk.)
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|a 0080540260
|q (electronic bk.)
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|a OPELS
|b eng
|e pn
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|a TK7871.85
|b .I57665 2001eb
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|a International Conference on Rapid Thermal Processing for Future Semiconductor Devices
|c Ise-Shima, Mie, Japan)
|d 2001 :
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|a Rapid thermal processing for future semiconductor devices :
|b proceedings of the 2001 International Conference on Rapid Thermal Processing for Future Semiconductor Devices (RTP 2001), held at Ise-Shima, Mie, Japan, November 14-16, 2001 /
|c edited by Hisashi Fukuda.
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| 260 |
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|a Amsterdam ;
|b Elsevier,
|c 2003.
|a London :
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| 300 |
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|a 1 online resource (x, 150 pages) :
|b illustrations
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| 504 |
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|a Includes bibliographical references.
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|a Cover -- Copyright Page -- CONTENTS -- Preface -- RTP2001 Organization -- Chapter 1. Role of Rapid Thermal Processing in the Development of Disruptive and Non-disruptive Technologies for Semiconductor Manufacturing in the 21st Century -- Chapter 2. Analytical Model for Spike Annealed Diffusion Profiles of Low-Energy and High-Dose Ion Implanted Impurities -- Chapter 3. Process and Technology Drivers for Single Wafer Processes in DRAM Manufacturing -- Chapter 4. Ultra-high vacuum rapid thermal chemical vapor deposition for formation of TiN as barrier metals -- Chapter 5. Implementations of Rapid Thermal Processes in Polysilicon TFT Fabrication -- Chapter 6. High-Performance Poly-Si TFT and its Application to LCD -- Chapter 7. Rapid Low Temperature Photo Oxidation Processing for Advanced Poly-Si TFTs -- Chapter 8. Properties of Phosphorus-Doped Polycrystalline Silicon Films Formed by Catalytic Chemical Vapor Deposition and Successive Rapid Thermal Annealing -- Chapter 9. Evaluation of Crystalline Defects in Thin, Strained Silicon-Germanium Epitaxial Layers by Optical Shallow Defect Analyzer -- Chapter 10. Novel UV-assisted Rapid Thermal Annealing of Ferroelectric Materials -- Chapter 11. Rapid Thermal Annealing of (l-x)Ta2O5-xTiO2 Thin Films Formed by Metalorganic Decomposition -- Chapter 12. Hard Breakdown Characteristics in a 2.2-nm-thick SiO2 film -- Chapter 13. Rapid Thermal MOCVD Processing for InP-Based Devices -- Chapter 14. Sb Pile-up at the SiO2/Si Interface during Drive-in Process after Predeposition using SOG Source -- Chapter 15. Large Refractive Index C-S-Au Composite Film Formation by Plasma Processes -- Chapter 16. The LEVITOR 4000 system, Ultra-fast, Emissivity-independent, heating of substrates via heat conduction through thin gas layers -- Chapter 17. Steady and Transient Gas Flow Simulation of SiGe Vertical Reactor -- Chapter 18. The Short-period (Si14/Ge1)20 and (Si28/Ge2)10 superlattices as Buffer Layers for the Growth of Si0.75Ge0.25 Alloy Layers -- Chapter 19. Si Epitaxial Growth on the Atomic-Order Nitrided Si(l00) Surface in SiH4 Reaction -- Chapter 20. Heavy Doping Characteristics of Si Films Epitaxially Grown at 450oC by Alternately Supplied PH3 and SiH4 -- Last Page.
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| 650 |
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|a Semiconductors
|x Heat treatment
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| 650 |
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|a Rapid thermal processing
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| 650 |
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4 |
|a Semiconductors
|x Heat treatment
|x Congresses. Rapid thermal processing
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| 650 |
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|a TECHNOLOGY & ENGINEERING
|x Electronics
|x Solid State.
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| 650 |
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|a TECHNOLOGY & ENGINEERING
|x Electronics
|x Semiconductors.
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| 650 |
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|a Rapid thermal processing.
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| 650 |
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7 |
|a Semiconductors
|x Heat treatment.
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| 700 |
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|a Fukuda, Hisashi.
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| 856 |
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|u http://search.ebscohost.com/login.aspx?direct=true&scope=site&db=nlebk&AN=203153
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|a CY-NiOUC
|b 5a0466e56c5ad14ac1eefbaa
|c 998a
|d 945l
|e -
|t 1
|x m
|z Books
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