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20171111234606.0 |
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110630s2011 sz a sb 101 0 eng d |
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|z 3037850515
|z 9783037850510
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|a CaPaEBR
|z 9783038134947 (e-book)
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| 050 |
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|a TK7874.84
|b .I58 2011eb
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| 111 |
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|a International Symposium on Technology Evolution for Silicon Nano-Electronics
|c Tokyo Institute of Technology)
|d (2010 :
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| 240 |
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|a Proceedings of the International Symposium on Technology Evolution for Silicon Nano-Electronics
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| 245 |
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|a Technology evolution for silicon nano-electronics
|b selected, peer reviewed papers from the proceedings of the International Symposium on Technology Evolution for Silicon Nano-Electronics 2010, June 3-5, 2010, Tokyo Institute of Technology, Tokyo, Japan /
|c edited by Seiichi Miyazaki and Hitoshi Tabata.
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| 246 |
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|a Proceedings of the International Symposium on Technology Evolution for Silicon Nano-Electronics
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| 260 |
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|a International Symposium on Technology Evolution for Silicon Nano-Electronics
|b Trans Tech Publications,
|c c2011.
|a Stafa-Zurich, Switzerland ;
|a Enfield, N.H. :
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| 300 |
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|a xi, 234 p. :
|b ill.
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| 504 |
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|a Includes bibliographical references and indexes.
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| 505 |
0 |
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|a High Mobility Ge-Based CMOS Device Technologies -- SiGe-Mixing-Triggered Rapid-Melting-Growth of High-Mobility Ge-On-Insulator -- Impact of Self-Heating Effect on the Electrical Characteristics of Nanoscale Devices -- Functional Device Applications of Nanosilicon -- Tunable Single-Electron Turnstile Using Discrete Dopants in Nanoscale SOI-FETs -- KFM Observation of Electron Charging and Discharging in Phosphorus-Doped SOI Channel -- Photoluminescence Characteristics of Ultra-Thin Silicon-on-Insulator at Low Temperatures -- Investigation about I-V Characteristics in a New Electronic Structure Model of the Ohmic Contact for Future Nano-Scale Ohmic Contact -- Collective Electron Tunneling Model in Si-Nano Dot Floating Gate MOS Structure -- Electronic Structure and Spin-Injection of Co-Based Heusler Alloy/ Semiconductor Junctions -- First-Principles Calculations of the Dielectric Constant for the GeO2 Films -- Nanosize Electronics Material Analysis by Local Quantities Based on the Rigged QED Theory -- Novel Source Heterojunction Structures with Relaxed-/Strained-Layers for Quasi-Ballistic CMOS Transistors -- Effect of Al2O3 Deposition and Subsequent Annealing on Passivation of Defects in Ge-Rich SiGe-on-Insulator -- Controlled Synthesis of Carbon Nanowalls for Carbon Channel Engineering -- Resistive Memory Utilizing Ferritin Protein with Nano Particle -- Atomically Controlled Plasma Processing for Group IV Quantum Heterostructure Formation -- Nanometer-Scale Characterization Technique for Si Nanoelectric Materials Using Synchrotron Radiation Microdiffraction -- Generation and Growth of Atomic-Scale Roughness at Surface and Interface of Silicon Dioxide Thermally Grown on Atomically Flat Si Surface -- Nano-Surface Modification of Silicon with Ultra-Short Pulse Laser Process -- Evaluation of Strained Silicon by Electron Back Scattering Pattern Compared with Raman Measurement and Edge Force Model Calculation -- Development of New Methods for Fine-Wiring in Si Using a Wet Catalytic Reaction -- Optical Response of Si-Quantum-Dots/NiSi-Nanodots Stack Hybrid Floating Gate in MOS Structures -- Energy Band Engineering of Metal Nanodots for High Performance Nonvolatile Memory Application -- Strained Ge and Ge1-xSnx Technology for Future CMOS Devices -- Improved Electrical Properties and Thermal Stability of GeON Gate Dielectrics Formed by Plasma Nitridation of Ultrathin Oxides on Ge(100) -- Structural Change during the Formation of Directly Bonded Silicon Substrates -- Microscopic Structure of Directly Bonded Silicon Substrates -- Formation of Nanotubes of Carbon by Joule Heating of Carbon-Contaminated Si Nanochains -- Si Nanodot Device Fabricated by Thermal Oxidation and their Applications -- Influences of Carrier Transport on Drain-Current Variability of MOSFETs -- Resistive Switching in NiO Bilayer Films with Different Crystallinity Layers -- Analysis of Threshold Voltage Variations in Fin Field Effect Transistors -- Capture/Emission Processes of Carriers in Heterointerface Traps Observed in the Transient Charge-Pumping Characteristics of SiGe/Si-Hetero-Channel pMOSFETs -- Quasi-Ballistic Transport in Nano-Scale Devices: Boundary Layer, Potential Fluctuation, and Coulomb Interaction -- Effect of Back Bias on Variability in Intrinsic Channel SOI MOSFETs -- Discrete Dopant Effects on Threshold Voltage Variation in Double-Gate and Gate-All-Around Metal-Oxide-Semiconductor Field-Effect-Transistors -- Interconnect Design Challenges in Nano CMOS Circuit.
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| 650 |
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|a Nanoelectronics
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| 650 |
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|a Nanostructured materials
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| 700 |
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|a Miyazaki, Seiichi.
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| 710 |
2 |
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|a ebrary, Inc.
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| 856 |
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|u http://site.ebrary.com/lib/ucy/Doc?id=10604254
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| 952 |
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|a CY-NiOUC
|b 5a045c6a6c5ad14ac1ed8ac9
|c 998a
|d 945l
|e -
|t 1
|x m
|z Books
|
