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000418s1988 gr r 000 0 eng d |
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|a 0878495754
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|a GR-KoDPT
|b gre
|e AACR2
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082 |
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|a 621.38152
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100 |
1 |
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|a Stievenard, D.
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245 |
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|a Ion implantation in semiconductors/
|c D. Stievenard, J. C. Bourgoin
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260 |
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|a Aedermannsdorf, Switzerland ;
|b Trans Tech Publications,
|c c1988
|a Brookfield, VT, USA:
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300 |
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|a v, 473 σ. :
|b εικ. ;
|c 25 εκ.
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500 |
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|a "Previously published in Diffusion and defect data pt. B: solid state phenomena"--Verso σ.τ.
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504 |
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|a Περιέχει βιβλιογραφικές παραπομπές και ευρετήριο
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504 |
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|a Includes bibliographical references and index
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650 |
0 |
0 |
|a Ion implantation
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650 |
0 |
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|a Semiconductors
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650 |
0 |
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|a Semiconductor doping
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650 |
0 |
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|a Semiconductors
|x Effect of radiation on
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650 |
0 |
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|a Ion implantation
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700 |
1 |
0 |
|a Bourgoin, J. C.
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710 |
1 |
0 |
|a Trans Tech
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952 |
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|a GrAtEKP
|b 59cd262e6c5ad1344610cb3c
|c 998a
|d 945l
|e 621.38152 StiD i 1988
|t 1
|x m
|z Books
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952 |
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|a GR-KoDPT
|b 59cc34956c5ad13446fb1fa9
|c 998a
|d 945l
|e TK 7871 .85
|t 1
|x m
|z Books
|